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NPN TRANSISTOR

NTE NPN Silicon Complementary Transistors High Voltage, General Purpose Amplifier

Frys#: 1799866 Model: NTE287
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Absolute Maximum Ratings
  • Collector-Emitter Voltage, VCEO: 300V
  • Collector-Base Voltage, VCBE: 300V
  • Emitter-Base Voltage, EBO : 6V
  • Continuous Collector Current,IC : 500mA
  • Total Device Dissipation @ TA = +25°C, PD: 625mW
  • Derate Above +25°C: 5mW/°C
  • Total Device Dissipation @ C = +25°C, PD: 1.5W
  • Derate Above +25°C: 12mW/°C
  • Operating Junction Temperature Range, TJ: -55° to +150°C
  • Storage Temperature Range, Ts: -55° to +150°C
  • Thermal Resistance, Junction-to-Ambient, Rth JA :200°C/mW
  • Thermal Resistance, Junction-to-Case, Rth JC :83.3°C/mW


Detailed Description
(Manufacturer # NTE287 )
Features
Specifications
Electrical Characteristics:(TA = +25°C unless otherwise specified)
Parameter / Symbol / Test Conditions Min / Typ / Max / Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage / V(BR)CEO / IC = 1mA,IB = 0 300 / - / - / V
Collector–Base Breakdown Voltage / V(BR)CBO / IC = 100µA,IE = 0 300 / - / - / V
Emitter–Base Breakdown Voltage / V(BR)EBO / IE = 100µA,IC = 0 6 / - / - / V
Collector Cutoff Current / ICBO / VCB = 200V,IE = 0 - / - / 0.1 / µA
Emitter Cutoff Current / IEBO / VEB = 6V,IC = 0 - / - / 0.1 / µA
ON Characteristics
DC Current Gain / hFE / IC = 1mA, VCE = 10V
IC = 30mA,VCE = 10V
25 / - / -
40 / - / -
Collector–Emitter Saturation Voltage / VCE(sat) / IC = 20mA,IB = 2mA - / - / 0.5 / V
Base–Emitter Saturation Voltage / VBE(sat) / IC = 20mA,IB = 2mA - / - / 0.9 / V
Small–Signal Characteristics
Current Gain Bandwidth Product / fT / IC = 10mA,VCE = 20V,f = 100MHz 50 / - / - / MHz
Collector–Base Capacitance / Ccb / VCB = 20V, IE = 0, f = 1MHZ - / - / 3 / pF
Specifications
Brand NTE
Condition New
UPC 768249123118
156     
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