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PNP TRANSISTOR

NTE PNP General Purpose Silicon Complementary Transistors

Frys#: 1972902 Model: NTE159M
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The PNP is widely used “Industry Standard” complementary transistors in a TO18 type case designed for applications such as medium–speed switching and amplifiers from audio to VHF frequencies

Detailed Description
(Manufacturer # NTE159M )
Features
  • Low Collector Saturation Voltage: 1V (Max)
  • High Current Gain–Bandwidth Product: fT = 300MHz (Min) @ IC 20mA
Specifications
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO 60V
Collector–Base Voltage, VCBO 60V
Emitter–Base Voltage, VEBO 5V
Continuous Collector Current, IC 600mA
Total Device Dissipation (TA = +25°C), PD 0.4W
Derate Above +25°C 2.28mW/°C
Total Device Dissipation (TC = +25°C), PD 1.8W
Derate Above +25°C 10.3mW/°C
Operating Temperature Range, TJ –65° to +200°C
Storage Temperature Range, Tstg –65° to +200°C
Electrical Characteristics : (TA = 25°C unless otherwise specified)
Parameter/ Symbol/ Test Conditions Min, Typ, Max, Unit
Off Characteristics
Collector–Emitter Breakdown Voltage/ V(BR)CEO/ IC = 10mA, IB = 0 60, –, –, V
Collector–Base Breakdown Voltage/ V(BR)CBO/ IC = 10μA, IE = 0 60, –, –, V
Emitter–Base Breakdown Voltage/ V(BR)EBO/ IE = 10μA, IC = 0 5, –, –, V
Collector Cutoff Current/ ICEX/ VCE = 30V, VBE = 500mV –, –, 50, nA
Collector Cutoff Current/ ICBO/ VCB = 50V, IE = 0
VCB = 50V, IE = 0, TA = +150°C
–, –, 10, μA
On Characteristics
DC Current Gain/ hFE/ VCE = 10V/ IC = 500mA
IC = 0.1mA
IC = 1mA
IC = 10mA
IC = 150mA
IC = 500mA
40, –, –
75, –, –
100, –, –
100, –, –
100, –, 300
50, –, –
Collector–Emitter Saturation Voltage/ VCE(sat)/ IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
–, –, 0.4, V
–, –, 1.6, V
Base–Emitter Saturation Voltage/ VBE(sat)/ IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
–, –, 1.3, V
–, –, 2.6, V
Small–Signal Characteristics
Current Gain–Bandwidth Product/ fT/ IC = 50mA/ VCE = 20V, f = 100MHz 200, –, –, MHz
Output Capacitance/ Cobo/ VCB = 10V, IE = 0, f = 100kHz –. –, 8, pF
Input Capactiance/ Cibo/ VBE = 2V/ IC = 0, f = 100kHz –, –, 30, pF
Switching Characteristics
Turn–On Time/ ton/ VCC = 30V, IC = 150mA, IB1 = 15mA
Delay Time/ td/ VCC = 30V, IC = 150mA, IB1 = 15mA
Rise Time/ tr/ VCC = 30V, IC = 150mA, IB1 = 15mA
Turn–Off Time/ tof/ VCC = 6V, IC = 150mA, IB1 = IB2 = 15mA
Storage Time/ ts/ VCC = 6V, IC = 150mA, IB1 = IB2 = 15mA
Fall Time/ tf/ VCC = 6V, IC = 150mA, IB1 = IB2 = 15mA
–, 26, 45, ns
–, 6, 10, ns
–, 20, 40, ns
–, 70, 100, ns
–, 50, 80, ns
–, 20, 30, ns
Specifications
Brand NTE
Condition New
UPC 768249058816
10000     
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